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ITCH22160B4

Innogration
Part Number ITCH22160B4
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH22160B4 Preliminary Datasheet V1.0 2000MHz-2200MHz, 160W, 28V High...
Datasheet PDF File ITCH22160B4 PDF File

ITCH22160B4
ITCH22160B4

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH22160B4 Preliminary Datasheet V1.
0 2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22160B4 Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
ITCH22160B4E Freq (MHz) Gmax (dB) P-1dB (dBm) P-3dB (dBm) D@P-3 (%) 2110 2140 2170 ...


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