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ITCH22161B2E

High Power RF LDMOS FET

Description

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22161B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/...


Innogration

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