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ITCH22161B2E

Innogration
Part Number ITCH22161B2E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH22161B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 160W, 28V High...
Datasheet PDF File ITCH22161B2E PDF File

ITCH22161B2E
ITCH22161B2E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH22161B2 Preliminary Datasheet V1.
0 2110MHz-2170MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22161B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Frequency Gp @ POUT=48dBm P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 2110  17.
5 52.
5 53.
3 56 2140 17.
5 52.
2 53.
1 56 2170 17.
5 51.
8 52.
9 56 ITCH22161B2E Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 800 mA, POUT= 46dBm Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 10.
5 dB @ 0.
01...


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