Part Number
|
ITCH16180B2 |
Manufacturer
|
Innogration |
Description
|
High Power RF LDMOS FET |
Published
|
Aug 5, 2018 |
Detailed Description
|
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16180B2 Preliminary Datasheet V2.0
1300MHz-1700MHz, 180W, 28V High...
|
Datasheet
|
ITCH16180B2
|
Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH16180B2 Preliminary Datasheet V2.
0
1300MHz-1700MHz, 180W, 28V High Power RF LDMOS FETs
Description
The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH16180B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
Frequency Gp (dB)
P-1dB (dBm)
D@P-1 (%)
P-3dB (dBm)
D@P-3 (%)
1390 MHz
18.
8
52.
8
55
53.
7
57
1...
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