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ITCH16180B2

Innogration
Part Number ITCH16180B2
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH16180B2 Preliminary Datasheet V2.0 1300MHz-1700MHz, 180W, 28V High...
Datasheet PDF File ITCH16180B2 PDF File

ITCH16180B2
ITCH16180B2

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH16180B2 Preliminary Datasheet V2.
0 1300MHz-1700MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH16180B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1390 MHz 18.
8 52.
8 55 53.
7 57 1...


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