High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd. Document Number: ITBH09260B Product Datasheet V1.0 700MHz-1000MHz, 260W, 28V High Power RF LDMOS FETs Description The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C f...
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