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ITBH09260B2

Innogration
Part Number ITBH09260B2
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITBH09260B Product Datasheet V1.0 700MHz-1000MHz, 260W, 28V High Power...
Datasheet PDF File ITBH09260B2 PDF File

ITBH09260B2
ITBH09260B2


Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITBH09260B Product Datasheet V1.
0 700MHz-1000MHz, 260W, 28V High Power RF LDMOS FETs Description The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITBH09260B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1200 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 875 MHz 19 54 55 54.
8 60 ITBH09260B2E Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Excellent thermal stability, low HCI drift Table 1.
Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case O...


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