Part Number
|
ITBH09200B2E |
Manufacturer
|
Innogration |
Description
|
High Power RF LDMOS FET |
Published
|
Aug 5, 2018 |
Detailed Description
|
Innogration (Suzhou) Co., Ltd.
Document Number: ITBH09200B Product Datasheet V2.0
700MHz-1000MHz, 200W, 28V High Power...
|
Datasheet
|
ITBH09200B2E
|
Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITBH09200B Product Datasheet V2.
0
700MHz-1000MHz, 200W, 28V High Power RF LDMOS FETs
Description
The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITBH09200B2
Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency Gp (dB)
D (%)
ACPR5M (dBc) ACPR10M (dBc)
920 MHz
19...
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