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ITBH09200B2E

Innogration
Part Number ITBH09200B2E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITBH09200B Product Datasheet V2.0 700MHz-1000MHz, 200W, 28V High Power...
Datasheet PDF File ITBH09200B2E PDF File

ITBH09200B2E
ITBH09200B2E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITBH09200B Product Datasheet V2.
0 700MHz-1000MHz, 200W, 28V High Power RF LDMOS FETs Description The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITBH09200B2 Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency Gp (dB) D (%) ACPR5M (dBc) ACPR10M (dBc) 920 MHz 19.
9 26.
4 -38.
5 -55.
4 960 MHz 20.
3 28.
8 -39.
2 -56.
4 875 MHz 19.
7 26.
5 -39 -55 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1000 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) ...


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