Innogration (Suzhou) Co.
, Ltd.
15W, 12V RF Power LDMOS FETs
Description
The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor.
It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz.
Document Number: ITSN20015P2 Product Datasheet V2.
0
ITSN20015P2
Typical Performance (On Innogration fixture with device soldered):
VDD = 12 Volts, IDQ = 300 mA，CW.
Frequency
P_1dB ηD P_3dB ηD
Gp (dB)
(MHz)
(W) (%) (W) (%)
870 16.
4 18 56 22 60
Typical Performance (On Innogration fixture with device soldered):
VDD = 12 Volts, IDQ = 350 mA，CW.
Frequency
Gp (dB)
P_1dB
ηD
P_3dB
ηD
(MHz)
(W) (%)...