DatasheetsPDF.com

ITSN20015P2

Innogration
Part Number ITSN20015P2
Manufacturer Innogration
Description RF Power LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. 15W, 12V RF Power LDMOS FETs Description The ITSN20015P2 is a common source N-channel, en...
Datasheet PDF File ITSN20015P2 PDF File

ITSN20015P2
ITSN20015P2

Overview
Innogration (Suzhou) Co.
, Ltd.
15W, 12V RF Power LDMOS FETs Description The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz.
Document Number: ITSN20015P2 Product Datasheet V2.
0 ITSN20015P2 Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW.
Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (W) (%) (W) (%) 870 16.
4 18 56 22 60 Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 350 mA，CW.
Frequency Gp (dB) P_1dB ηD P_3dB ηD (MHz) (W) (%)...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)