Part Number
|
VTSU011K2 |
Manufacturer
|
Innogration |
Description
|
RF Power N-channel MOSFET |
Published
|
Aug 5, 2018 |
Detailed Description
|
Innogration (Suzhou) Co., Ltd.
1200W, 100V RF Power N-channel MOSFETs
Description
The VTSU011K2 is a 1200-watt, N-chan...
|
Datasheet
|
VTSU011K2
|
Overview
Innogration (Suzhou) Co.
, Ltd.
1200W, 100V RF Power N-channel MOSFETs
Description
The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed
applications at frequencies up to 200 MHz.
It’s suitable for use in industrial, scientific and medical applications.
Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10%
Frequency Gp (dB)
POUT (W)
D (%)
120 MHz
26
1200
60
Document Number: VTSU011K2 Production Datasheet V1.
0
VTSU011K2
Features
Common source configuration, push pull Excellent thermal stability, low HCI drift Low RDS(on) Pb-free, RoHS-compliant
Table 1.
Maximum Ratings Rating
Drain-Source Voltage ...
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