DatasheetsPDF.com

VTSU011K2

Innogration
Part Number VTSU011K2
Manufacturer Innogration
Description RF Power N-channel MOSFET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. 1200W, 100V RF Power N-channel MOSFETs Description The VTSU011K2 is a 1200-watt, N-chan...
Datasheet PDF File VTSU011K2 PDF File

VTSU011K2
VTSU011K2

Overview
Innogration (Suzhou) Co.
, Ltd.
1200W, 100V RF Power N-channel MOSFETs Description The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed applications at frequencies up to 200 MHz.
It’s suitable for use in industrial, scientific and medical applications.
 Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 26 1200 60 Document Number: VTSU011K2 Production Datasheet V1.
0 VTSU011K2 Features  Common source configuration, push pull  Excellent thermal stability, low HCI drift  Low RDS(on)  Pb-free, RoHS-compliant Table 1.
Maximum Ratings Rating Drain-Source Voltage ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)