MNP0014 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and Package Styles  Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available Description The MNP0014 Series are silicon NIP diodes that features a fully passivated mesa construction for low leakage and reliability.
Rev.
V2 Electrical Specifications: TC = +25°C Parameter Test Conditions Voltage Breakdown Junction Capacitance DIE Package (C22p) Total Capacitance Package Style: ET47p T54p T55p T89p Series Resistance IR = 10 µA VR = 50 V, 1 MHz VR = 50 V, 1 MHz IF = 100 mA, 500 MHz Lifetime IF = 10 mA, IR = 6 mA, 50% I Layer — Units V pF Min.
500 — Typ.
— 0.
12 Max.
— ...

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