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MNP0010

MA-COM
Part Number MNP0010
Manufacturer MA-COM
Description Silicon NIP Diode
Published Aug 7, 2018
Detailed Description MNP0010 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and P...
Datasheet PDF File MNP0010 PDF File

MNP0010
MNP0010

Overview
MNP0010 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and Package Styles  Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available Description The MNP0010 is a silicon NIP diode that features a fully passivated mesa construction for low leakage and reliability.
Rev.
V2 Electrical Specifications: TC = +25°C Parameter Test Conditions Voltage Breakdown Junction Capacitance DIE Package (C12p) Total Capacitance Package Style: ET47p T54p T55p T89p Series Resistance IR = 10 µA VR = 10 V, 1 MHz VR = 10 V, 1 MHz IF = 10 mA, 500 MHz Lifetime IF = 10 mA, IR = 6 mA, 50% I Layer — Units V pF Min.
150 — Typ.
— 0.
08 Max.
— 0.
12 pF — 0.
48 0.
60 0.
28 0.
37 0.
21 0.
29 0.
33 0.
43 Ω — 2.
0 2.
5 ns — 300 — µm — 20 — Absolute Maximum Ratings1,2 Parameter Reverse Voltage Thermal Resistance Operating & Storage Temperature Absolute Maximum 150 V +50°C/W -65°C to +150°C 1.
Exceeding any one or ...


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