30V Dual N-Channel MOSFETs
PDS3810
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Dual SOP8 Pin Configuration D1
D2 D2 D1 D1
G1 G2
S2G2 S1G1
G S1
D2 S2
BVDSS 30V
RDSON 13m
ID 10A
Features
30V,10A, RDS(ON) =13mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA...