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PDS3808

Potens semiconductor
Part Number PDS3808
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 30V N-Channel MOSFETs PDS3808 General Description These N-Channel enhancement mode power field effect transistors are ...
Datasheet PDF File PDS3808 PDF File

PDS3808
PDS3808

Overview
30V N-Channel MOSFETs PDS3808 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
BVDSS 30V RDSON 11m ID 9A Features  30V,9A, RDS(ON) =11mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Dual SOP8 Pin Configuration D2 D2 D1 D1 D1 G1 G2 G1S2 S1 S1 G2 Applications D2  MB / VGA / Vcore  POL Applications  SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipation (T...


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