20V N-Channel MOSFETs
PDN2312S
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S G
G S
BVDSS 20V
RDSON 19m
ID 6.
7A
Features 20V, 6.
7A, RDS(ON)=19mΩ@VGS=4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.
8V Gate Drive Applications
Applications
Notebook Load Switch H...