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PDN2312S

Potens semiconductor
Part Number PDN2312S
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 20V N-Channel MOSFETs PDN2312S General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDN2312S PDF File

PDN2312S
PDN2312S

Overview
20V N-Channel MOSFETs PDN2312S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration D D S G G S BVDSS 20V RDSON 19m ID 6.
7A Features  20V, 6.
7A, RDS(ON)=19mΩ@VGS=4.
5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.
8V Gate Drive Applications Applications  Notebook  Load Switch  H...


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