30V N-Channel MOSFETs
PDN3912S
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
S G
G
D S
BVDSS 30V
RDSON 24m
ID 6.
5A
Features 30V,6.
5A, RDS(ON) =24mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA / Vcore Load Switch Hand-Held ...