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PDN3914S

Potens semiconductor
Part Number PDN3914S
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 30V N-Channel MOSFETs PDN3914S General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDN3914S PDF File

PDN3914S
PDN3914S


Overview
30V N-Channel MOSFETs PDN3914S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration D S G G D S BVDSS 30V RDSON 25m ID 5.
5A Features  30V,5.
5A, RDS(ON) =25mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  Load Switch  Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Puls...



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