30V N-Channel MOSFETs
PDN3916S
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23S Pin Configuration
D
D
S G
G
S
BVDSS 30V
RDSON 35m
ID 5.
1A
Features
30V,5.
1A , RDS(ON)=35mΩ@VGS=10V Improved dv/dt capability Fast switching Green Device Available
Applications
MB / VGA / Vcore Load Switch Hand-Held Instrument
Absolute Maxi...