20V P-Channel MOSFETs
PDN2309
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3 Pin Configuration
D
D
S G
G S
BVDSS -20V
RDSON 33m
ID -5.
8A
Features -20V,-5.
8A, RDS(ON) =33mΩ@VGS = -4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.
8V Gate Drive Applications
Applications
Notebook Load Switc...