Part Number
|
HY3312M |
Manufacturer
|
HOOYI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Aug 19, 2018 |
Detailed Description
|
HY3312P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
...
|
Datasheet
|
HY3312M
|
Overview
HY3312P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
125 ±25 175 -55 to 175 130
IDM Pulsed Drain Current * ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
410** 130 93 278 139 0.
54 62.
5
EAS Avalanche Energy, Single Pulsed
L=0.
5mH
Note * Repetitive rating ; pulse width limiited by junc...
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