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HY3312M

HOOYI
Part Number HY3312M
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Aug 19, 2018
Detailed Description HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) ...
Datasheet PDF File HY3312M PDF File

HY3312M
HY3312M

Overview
HY3312P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 -55 to 175 130 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 410** 130 93 278 139 0.
54 62.
5 EAS Avalanche Energy, Single Pulsed L=0.
5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=90V 720*** Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W mJ Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage ...


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