20V N+P Dual Channel MOSFETs
PDEV2120Z
General Description
These N+P dual Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT363 Dual Pin Configuration
BVDSS 20V -20V
RDSON 300m 600m
ID 800mA -400mA
Features
Fast switching Green Device Available Suit for 1.
5V Gate Drive Applications
D1 G2 S2
G1
S1 G1 D2
D1 D2
G2 S1
Applications
Notebook Load Switch Netw...