20V N-Channel MOSFETs
PDEU2320Z
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT323 Pin Configuration
D
D
S G
G
S
BVDSS 20V
RDSON 300m
ID 800mA
Features
20V,800mA, RDS(ON) =300mΩ@VGS = 4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.
5V Gate Drive Applications
Applications
Notebook Load Switc...