20V P-Channel MOSFETs
PDEU2319X
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT723 Pin Configuration
D
D
G S
G S
BVDSS -20V
RDSON 650m
ID -400mA
Features
-20V,-400mA, RDS(ON) =650mΩ@VGS = -4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.
5V Gate Drive Applications
Applications
Notebook Load ...