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PDEU2319Y

Potens semiconductor
Part Number PDEU2319Y
Manufacturer Potens semiconductor
Description P-Channel MOSFETs
Published Aug 20, 2018
Detailed Description 20V P-Channel MOSFETs PDEU2319Y General Description These P-Channel enhancement mode power field effect transistors ar...
Datasheet PDF File PDEU2319Y PDF File

PDEU2319Y
PDEU2319Y

Overview
20V P-Channel MOSFETs PDEU2319Y General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT523 Pin Configuration D D S G G S BVDSS -20V RDSON 600m ID -400mA Features  -20V,-400mA, RDS(ON) =600mΩ@VGS = -4.
5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.
5V Gate Drive Applications Applications  Notebook  Load...


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