20V P-Channel MOSFETs
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT883 Pin Configuration
D
S G
D
G S
PDEU2319W
BVDSS -20V
RDSON 650m
ID -250mA
Features -20V,-250mA, RDS(ON) =650mΩ@VGS = -4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.
5V Gate Drive Applications
Applications
Notebook Load ...