100V N-Channel MOSFETs
PDP0980
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO220 Pin Configuration
D
GDS
G
S
BVDSS 100V
RDSON 4.
2m
ID 150A
Features
100V,150A, RDS(ON) =4.
2mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load Switch LED applications ...