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PDP0970

Potens semiconductor
Part Number PDP0970
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 20, 2018
Detailed Description 100V N-Channel MOSFETs PDP0970 General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDP0970 PDF File

PDP0970
PDP0970

Overview
100V N-Channel MOSFETs PDP0970 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO220 Pin Configuration D GDS G S BVDSS 100V RDSON 3.
5m ID 160A Features  100V,160A, RDS(ON) =3.
5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications  Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) (Chip Limitation) Drain Current – Continuous (TC=100℃) (Chip Limita...


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