100V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO251 Pin Configuration
D
D
G DS
G
S
PDR0910
BVDSS 100V
RDSON 185m
ID 8A
Features 100V,8A, RDS(ON) =185mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed
ApplicGaretieonnDsevice Available
Networking Load Switch LED applications
Abs...