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PDR0910

Potens semiconductor
Part Number PDR0910
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 21, 2018
Detailed Description 100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using tr...
Datasheet PDF File PDR0910 PDF File

PDR0910
PDR0910

Overview
100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO251 Pin Configuration D D G DS G S PDR0910 BVDSS 100V RDSON 185m ID 8A Features  100V,8A, RDS(ON) =185mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed ApplicGaretieonnDsevice Available  Networking  Load Switch  LED applications Abs...


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