30V N-Channel MOSFETs
PDD3912
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D
D
S G
G
S
BVDSS 30V
RDSON 18m
ID 28A
Features
30V,28A, RDS(ON) =18mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA / Vcore POL Applications SMPS 2nd S...