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PDD3912

Potens semiconductor
Part Number PDD3912
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 21, 2018
Detailed Description 30V N-Channel MOSFETs PDD3912 General Description These N-Channel enhancement mode power field effect transistors are ...
Datasheet PDF File PDD3912 PDF File

PDD3912
PDD3912

Overview
30V N-Channel MOSFETs PDD3912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D D S G G S BVDSS 30V RDSON 18m ID 28A Features  30V,28A, RDS(ON) =18mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanc...


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