isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.
) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B/W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD823
isc website:www.
iscsemi.
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