Part Number
|
GT60N323 |
Manufacturer
|
Toshiba |
Description
|
Silicon N-Channel IGBT |
Published
|
Sep 3, 2018 |
Datasheet
|
GT60N323
|
Features
GT60N323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N323
Voltage Resonance Inverter Switching Application
Unit: mm
• diode included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.19 μs (t...
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