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GT60N323

Part Number GT60N323
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 3, 2018
Datasheet GT60N323




Features
GT60N323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N323 Voltage Resonance Inverter Switching Application Unit: mm
• diode included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.19 μs (t...






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