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GT60N322

Toshiba Semiconductor
Part Number GT60N322
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 17, 2008
Detailed Description www.DataSheet4U.com GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonan...
Datasheet PDF File GT60N322 PDF File

GT60N322
GT60N322

Overview
www.
DataSheet4U.
com GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.
11 μs (typ.
) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.
4 V (typ.
) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCE...


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