ST2300SRG
N Channel Enhancement Mode MOSFET
6.
0A
DESCRIPTION
The ST2300SRG is the N-Channel logic enhancement mode power field effect
transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D G 1
S 2
1.
Gate 2.
Source 3.
Drain
FEATURE
20V/6.
0A, RDS(ON) = 35mΩ (Typ.
) @VGS = 10V
20V/5.
0A, RDS(ON) = 48mΩ @VGS = 4.
5V
20V/4.
5A,...