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ST2300SRG

Part Number	ST2300SRG
Manufacturer	Stanson Technology
Description	N-Channel Enhancement Mode MOSFET
Published	Sep 3, 2018
Detailed Description	ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode pow...
Datasheet	ST2300SRG PDF File

Overview

ST2300SRG N Channel Enhancement Mode MOSFET 6.
0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 3 D G 1 S 2 1.
Gate 2.
Source 3.
Drain FEATURE 20V/6.
0A, RDS(ON) = 35mΩ (Typ.
) @VGS = 10V 20V/5.
0A, RDS(ON) = 48mΩ @VGS = 4.
5V 20V/4.
5A,...

Similar Datasheet

ST2300SRG N-Channel Enhancement Mode MOSFET - Stanson Technology

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