N-Channel Power Trench MOSFET
FDMS5352 N-Channel Power Trench® MOSFET October 2014 FDMS5352 N-Channel Power Trench® MOSFET 60V, 49A, 6.7m: Features General Description Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produce...
Fairchild Semiconductor