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FDMS5352

Fairchild Semiconductor
Part Number FDMS5352
Manufacturer Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Published Sep 7, 2018
Detailed Description FDMS5352 N-Channel Power Trench® MOSFET October 2014 FDMS5352 N-Channel Power Trench® MOSFET 60V, 49A, 6.7m: Feature...
Datasheet PDF File FDMS5352 PDF File

FDMS5352
FDMS5352

Overview
FDMS5352 N-Channel Power Trench® MOSFET October 2014 FDMS5352 N-Channel Power Trench® MOSFET 60V, 49A, 6.
7m: Features General Description „ Max rDS(on) = 6.
7m: at VGS = 10V, ID = 13.
6A „ Max rDS(on) = 8.
2m: at VGS = 4.
5V, ID = 12.
3A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
„ 100% UIL Tested Application „ RoHS Compliant „ DC - DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energ...


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