INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC2665
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation
APPLICATIONS ·Designed for audio frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
4A 55 W 150 ℃
Tstg Storage Temperature Range
-40~150
℃
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