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C2612

Hitachi Semiconductor
Part Number C2612
Manufacturer Hitachi Semiconductor
Description 2SC2612
Published Mar 5, 2016
Detailed Description 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2...
Datasheet PDF File C2612 PDF File

C2612
C2612

Overview
2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg 1.
Base 2.
Collector (Flange) 3.
Emitter Ratings 500 400 7 3 6 1.
5 30 150 –55 to +150 Unit V V V A A A W °C °C 2SC2612 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol Min VCEO(sus) 400 VCEX(sus) 400 Typ — — Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1.
Pulse test V(BR)EBO I CBO I CEO hFE1 hFE2 VCE(sat) VBE(sat) t on t stg tf 7 — — 15 7 — — — — — — — — — — — — — 1.
2 — Max Unit —V —V —V 100 µA 100 µA — — 1.
0 V 1.
5 V 1.
0 µs 2.
5 µs 1.
0 µs Test conditions IC = 0.
2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = –IB2 = 0.
6 A VBE = –5 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 1.
5 A*1 VCE = 5 V, IC = 3.
0 A*1 IC = 1.
5 A, IB = 0.
3 A*1 IC = 1.
5 A, IB = 0.
3 A*1 IC = 3 A, IB1 = –IB2 = 0.
6 A, VCC ≅ 150 V Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 45 30 15 0 50 100 150 Case temperature TC (°C) 2550µs2µ5s0 1µPsmWsD=C1O0=pme2sr5a°tCion TC Area of Safe Operation 10 iC(peak) ICmax(Continuous) 1.
0 0.
1 0.
01 Ta = 25°C, 1 Shot 0.
001 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) 2 Collector current derating rate (%) Collector Current Derating Rate 100 80 60 IS/B Limit Area 40 20 0 50 100 150 Case temperature TC (°C) Collector current IC (A) Reverse Bias Area of Safe Operation 10 8 6 350 V, 6 A 4 2 IB2 = ...


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