PD57070-E PD57070S-E
RF POWER
transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 70 W with 14.
7dB gain @945 MHz/28 V ■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
Device’s superior linea...