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PD57070S-E

Part Number	PD57070S-E
Manufacturer	STMicroelectronics
Description	RF POWER transistor
Published	Sep 20, 2018
Detailed Description	PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ ...
Datasheet	PD57070S-E PDF File

Overview

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 14.
7dB gain @945 MHz/28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
Device’s superior linea...

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PD57070S-E RF POWER transistor - STMicroelectronics

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