PD57006-E
RF POWER
transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies of up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
Device’s superior linearity per...