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PD57006-E

STMicroelectronics
Part Number PD57006-E
Manufacturer STMicroelectronics
Description RF POWER transistor
Published Sep 20, 2018
Detailed Description PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent t...
Datasheet PDF File PD57006-E PDF File

PD57006-E
PD57006-E

Overview
PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies of up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
Device’s superior linearity per...


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