Aug 2007 PFU1N70 / PFD1N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.
8 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 12.
0 Ω (Typ.
) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters.
PFU1N70/PFD1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on)typ = 12.
0 Ω ID = 0.
8 A Drain  Gate  ● ◀▲ ● ●  Source I-PAK(TO-251) 1 2 3 1.
Gate 2.
Drain 3.
Source D-PAK(TO-252) 2 1 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VD...

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